South Korean expertise big Samsung on Thursday introduced the enlargement of its DDR5 DRAM reminiscence portfolio with the business’s first 512GB DDR5 module, based mostly on Excessive-Ok Steel Gate (HKMG) course of expertise, for bandwidth-intensive superior computing functions.
Using the extremely superior HKMG expertise, Samsung’s DDR5 is able to delivering greater than twice the efficiency of DDR4 at as much as 7,200 megabits per second (Mbps), making it particularly appropriate for probably the most excessive compute-hungry, high-bandwidth workloads in supercomputing, synthetic intelligence (AI) and machine studying (ML), in addition to knowledge analytics functions.
Samsung says the brand new DDR5 module may even use roughly 13% much less energy and shall be supreme for knowledge facilities the place power effectivity is turning into more and more crucial.
DDR5 makes use of through-silicon by way of (TSV) expertise to stack eight layers of 16GB DRAM chips, providing the most important capability of 512GB. The expertise was beforehand leveraged in DRAM in 2014 when Samsung launched server modules with capacities as much as 256GB.
Commenting on this improvement, Younger-Soo Sohn, Vice President of the DRAM Reminiscence Planning/Enabling Group at Samsung Electronics, stated, “Samsung is the one semiconductor firm with logic and reminiscence capabilities and the experience to include HKMG cutting-edge logic expertise into reminiscence product improvement.”
“By bringing any such course of innovation to DRAM manufacturing, we’re capable of supply our prospects high-performance, but energy-efficient reminiscence options to energy the computer systems wanted for medical analysis, monetary markets, autonomous driving, good cities and past,” he additional added.
